Abstract
ZnO is a wide band gap (3.37 eV) semiconductor having excellent photocatalytic activity in the UV region. However, visible light active photocatalysts are the urge of this era of extensive pollutants and g-C3N4 having narrow band gap (2.7 eV) is an alternative suggestion for most of the UV light active metal oxide based semiconductor photocatalysts including ZnO. But, due to the high recombination rate of charge carriers and narrow absorption range (<460 nm), pristine g-C3N4 is of limited photocatalytic activity. Here we have used an intelligent pursuit, of the combination of ZnO with g-C3N4, for the development of a visible light active photocatalyst. The material is well characterized to investigate its photocatalytic properties and is efficiently used in the degradation of a model azo dye pollutant Congo red under sunlight.
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