Abstract
Visible cathode luminescence (CL) spectra were observed between the wavelengths of 480 and 750 nm at room temperature from oxidized dysprosium (Dy)-doped silicon films formed by pulsed-jet chemical vapor deposition. The films were deposited using CH3SiH3 and Dy(C11H19O2)3 gases at 600 °C on Si(001) substrates followed by thermal oxidization at 860 °C for 30 min. Since the CL spectra from the film were similar to those from Dy2O3 powder, it seems that Dy2O3 as well as SiO2 were formed after the thermal oxidation. The observed CL spectrum appeared to correspond to that of Dy3+ in Dy2O3 or in SiO2 matrix. Secondary ion mass spectrometry measurements of the deposited film showed that Dy was highly doped up to 2×1021 atoms/cm3.
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