Abstract
The water-gated thin-film transistor (TFT) was demonstrated with In2O3 channel grown by metal–organic chemical vapor deposition (MOCVD) for visible-blind ultraviolet (UV) detection application. The simple water-gated TFT displays great photocurrent responsivity in depletion state (∼5300 A W−1 at wavelength of 280 nm). The UV–visible rejection ratio is as high as 105. Additionally, the UV detector shows great repeatability with fast response and a decay time of 0.2 s despite the low operation voltage (≤1 V). The performance could be attributed to the band-to-band photon emission in the polycrystalline In2O3 channel prepared by MOCVD and the large capacitance of water dielectric gate.
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