Abstract
Visible and solar-blind photodetectors have been fabricated on undoped GaN and AlGaN (x ∼ 0.40) layers grown by plasma-assisted molecular beam epitaxy. The use of single and double AlGaN/GaN superlattice buffers and their effects on the grown structures were explored. Metal–semiconductor–metal (MSM) and Schottky barrier photodiodes were characterised. A band-edge responsivity of 49 mA/W for GaN MSM photodiodes was obtained using a single superlattice as buffer. The growth of an additional superlattice as intermediate buffer enhanced the dark current of MSM devices due to the charge accumulation induced by piezoelectric effects inside the superlattice. Schottky barrier photodiodes showed a photosignal below the bandgap with opposite sign to the GaN photoresponse. This signal could be related to the superlattice absorption.
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