Abstract
AbstractWe have characterized dislocations in strained‐Si/SiGe heterostructures with different doping concentration by using electron beam induced current (EBIC). Lower energy (4 keV) electron beam was used to observe the defects, namely misfit dislocations (MDs) and threading dislocations (TDs) at the interface of strained‐Si/SiGe. Fine dark lines and dark dots were appeared in the 4 keV EBIC images below 100 K. It was found that the visibility of MDs at the upper interface depends on the specimen structure and doping concentration. The results were analyzed in term of the internal electric field related to the doping concentration in samples. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
