Abstract
AbstractTransport of a chemical species through a viscous fluid with reaction at an interface is modelled by a quasi‐static process in which the transient behaviour is dominated by motion of the reactive surface. The reaction is accompanied by a molar volume change which leads to motion of the free surface. A decoupled stream function‐vorticity formulation is introduced in conjunction with a moving finite element method. This also permits convenient treatment of the free and reactive surface boundary conditions. The model is applied to the growth of oxide films on silicon surfaces and reveals the effect of surface curvature on film growth.
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