VIS/IR spectroscopy of thin AIN films grown by pulsed laser deposition at 400°C and 800°C and various N2 pressures

Abstract

The optical properties of pulsed-laser-deposited (PLD) AlN films on silicon are reported in the wide visible and infrared spectral range from 5×104 cm−1 to 350 cm−1. The films were deposited at 400 °C or 800 °C and in vacuum or nitrogen gas ambient at pressures from 0.1 Pa to 10 Pa. The optical constants of the films were determined by modelling the spectroscopic ellipsometry data recorded in both the visible and infrared spectral ranges. The PLD AlN films deposited in vacuum have a bandgap energy of 6.2 eV in a good agreement with the crystalline AlN material, while an effective bandgap narrowing was observed for films deposited in N2 ambient. This effect was most pronounced in films deposited at 400°C, where the optical absorption below the fundamental edge was the largest due to a larger degree of disorder in the films. Fourier transform infrared spectroscopy was used to identify AlN phonon modes and stress in the films. The shift and broadening of the E1(TO) peak towards the higher wave numbers indicates that an increased compressive stress is developed in the deposited films as the nitrogen pressure is increased.