Virtual Metrology Model Robustness Against Chamber Condition Variation Using Deep Learning

Abstract

Virtual metrology (VM) predicts the actual measurement for ongoing semiconductor process. Optical emission spectroscopy (OES) data is often used to build up VM models, since it has a lot of information on process quality. However, it also includes significant redundant information, so it is important how to select only meaningful features. Deep learning (DL) techniques have been very successful in analyzing image data and it is tempting to apply those techniques to the OES data. In this paper, we propose DL configurations specific to OES data that outperform those used for image analysis. Specifically, our proposed method accounts for variable size data, chamber to chamber differences, condition drift due to accumulation, observation data drift due to an accumulation of deposition on a window, and the effects of maintenance. We evaluated our method on a real, mass-production dataset and compared our results with those obtained by using state-of-the-art image analysis DL techniques in the famous contest, ImageNet large-scale visual recognition challenge (ILSVRC).