Abstract
The 1.014 eV photoluminescence spectrum observed in Cu diffused, quenched silicon crystals exhibits a characteristic strong phonon sideband structure. It is shown that the intensity decrease of the no-phonon transition from 4.2 to 40 K is not due to vibronic coupling but originates in the population of excited electronic states of the defect. The thermal luminescence data and published lifetime measurements can consistently be explained by the electronic level scheme which was recently proposed.
Published Version
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