Vibrational relaxation rates for H on a Si(1 0 0):(2×1) surface: a two-dimensional model

Abstract

The results of calculations based on perturbation theory of vibrational relaxation rates due to coupling to substrate phonons for hydrogen atoms adsorbed on a Si(1 0 0):(2×1) surface are presented. For this purpose a two-dimensional model is adopted in which both the H–Si stretching and bending motions are included. It is shown that within this model the multiphonon emission and absorption processes play a negligible role. The calculated lifetimes agree well with available experimental data.