Abstract
A lattice dynamical model based on ab initio methods has been developed for the common Cmcm-type orthorhombic high-pressure phase of binary semiconductors. It is applied to ZnTe. The model supplies the zone-center phonon frequencies which are compared to experimental Raman scattering results. The complete phonon dispersion relations and the one-phonon density of states of Cmcm-ZnTe are calculated. The phonon eigenvectors at the G point of the Brillouin zone are given.
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