Abstract
We report on the vibrational properties of arsenic-deposited InP(1 1 0) surface based on investigations carried out using an adiabatic bond charge model. We have considered two structural models: epitaxially continued layer structure and an exchange-reacted structure. The structural and electronic information necessary for these calculations is obtained using the ab initio pseudopotential method. For both structural models, we find that deposition of As on InP(1 1 0) results in several characteristic new phonon modes in the bulk acoustical–optical gap range, with the density of states for the exchange-reacted model characterised by a clear gap of 10 meV .
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