Abstract
An apparatus is described which permits for the first time the resolution of anelastic relaxation effects in evaporated metallic thin films and ion-implanted surface layers of silicon. The composite samples consist of the film or layer of interest on a carrier substrate having the form of a thin cantilevered reed. Low external losses and an exceptionally good span of operating frequencies are obtained by integrally bonding the substrate to a supporting pedestal and by using electrostatic drive and detection for the transverse modes of vibration. The internal friction can be measured with relatively simply instrumentation, at pressures below 10-5 (1.33 × 10-3 Pa) and over the temperature range -190°C to 550°C. The apparatus has considerable versatility for work in a number of areas, including the investigation of metallic foils prepared by splat-cooling.
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