Abstract
The main focus in Nb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Sn development efforts has so far been on continuous and significant improvement of current carrying capacity at higher field up to 16 T, particularly for high energy physics applications. Other areas, however, would still prefer a material having a moderate level of magnetization while keeping a respectable non-copper .I' in the range of 1000-2000 A/mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> at 12 T. An internal-tin processed Nb <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Sn material was designed and fabricated with this range of non-copper J <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> in mind. It is expected that the resultant strand will exhibit modest magnetization characteristics, which can be converted to a measure of ac losses or effective filament diameter. Various restack wire designs with different diffusion barrier methods along with sub-element count and pattern applicable to distributed and collective barrier methods were explored to investigate the effect on overall wire performance.
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