Abstract
A hot wall technique was applied to grow PbI2 thin films of about 100 nm thickness on cleaved surfaces of CdI2 single crystals. The band-edge exciton absorption spectra were investigated for the films grown in various conditions. A very sharp exciton absorption line of 8.8 meV half-width was obtained in a PbI2 single-crystal film grown at a 75 °C substrate temperature. The sharpness of the exciton line proved the excellent quality of the PbI2 film and the usefulness of the technique.
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