Abstract
AbstractAn all‐alkoxide route to SrBi2Ta2O9 (SBT) thin films and powders was developed. While stoichiometric gels transformed to single‐phase SBT, excess bismuth was required to obtain single‐phase SBT films on Pt substrates. An annealing temperature of 800 °C in O2 for 2 minutes was required to crystallize the films. Electrical measurements of SBT films produced under these conditions showed that films less than 2000 Å in thickness were shorted, while films of 3000 to 5000 Λ had a dielectric constant of~ 300. RBS measurements of a bismuth titanate film on Pt indicated that Pt diffuses into the dielectric layer when annealed at 700 °C in O2 for 1 minute, suggesting that interfacial reaction of these layered bismuth materials may be significant.
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