Abstract
The presence of an unusually shallow donor, with 1.5–2 meV binding energy, in high-mobility GaAs grown by gas-source molecular-beam epitaxy, has recently been inferred from electrical transport and photoluminescence measurements by Cunningham and co-workers [Appl. Phys. Lett. 53, 1285 (1988)]. We show that the data provided in support of the existence of a donor with this binding energy is not sufficient to draw such a conclusion.
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