Abstract

A strain-compensated InP-based quantum cascade laser (QCL) structure emitting at 4.6 μm is demonstrated, based on a two-phonon resonant design and grown by solid-source molecular beam epitaxy (MBE). By optimizing the growth parameters, a very high quality heterostructure with the lowest threshold current densities ever reported for QCLs was fabricated. Threshold current densities as low as 0.47 kA/cm2 in pulsed operation and 0.56 kA/cm2 in continuous-wave (cw) operation at 293 K were achieved for this state-of-the-art QCL. A minimum power consumption of 3.65 W was measured for the QCL, uncooled, with a high-reflectivity (HR) coating on its rear facet.

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