Abstract
Room-temperature Ga(1−x)AlxAs-GaAs DH lasers with very low threshold current densities have been grown by metalorganic chemical vapor deposition (MO-CVD). Devices have been fabricated with thresholds lower than the best values reported for comparable devices grown by liquid-phase epitaxy. The lowest threshold achieved is 590 A/cm2 for a laser with an active layer thickness of d=1100 Å and Ga(1−x)AlxAs confinement layers with x∼0.50.
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