Abstract
In this work, we present a systematic study of the surface recombination velocity of boron-diffused Si wafer passivated with plasma-enhanced chemical-vapor-deposited (PECVD) AlOx layers. Saturation current densities in the range of 5.2–38fAcm−2 (at 300K) were achieved on planar surfaces. In particular, we present an industrially relevant boron emitter, allowing for about 700mV open circuit voltage on textured surfaces, after a firing process. This high passivation quality could be achieved using AlOx passivation layers deposited by PECVD. The passivation quality is found to be equivalent to AlOx layers deposited by plasma-assisted atomic-layer-deposition. A wide range of surface doping concentration (2.5–70×1018cm−3) was investigated. The emitters used here allow a high resolution in the determination of the surface recombination velocity upper limit. Our simulations, based on Fermi-Dirac statistics, indicate that only very shallow emitters can be used to further increase the resolution on the determination of the surface recombination velocity.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.