Abstract
We have investigated the operating parameters controlling the average roughness Ra of diamond films obtained through chemical-vapor deposition using microwave-sustained plasmas. The plasma was provided by a surface-wave discharge in the form of a convex hemisphere facing the substrate and the films were deposited on Si(100) substrates. The procedure leading to fine grain, low-roughness diamond films called for high microwave power density absorbed in the plasma and very small grain size powder for substrate pretreatment in an ultrasonic bath, using hexane as the suspension liquid. Pretreating then with ≤ 0.25 μm diamond grit and operating, for example, with a microwave power density of 25 W/cm3 (1.2 kW total absorbed power) and 0.75% CH4 in a CH4–H2 mixture, we got Ra = 6 nm for a 1-μm-thick film with an average crystallite size of 50 nm. The corresponding nucleation density was remarkably high, at 7.5×1010 cm−2; diamond film isoquality was good and adhesion to the substrate strong.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.