Abstract
The effects on the contact resistivity of annealing Al Si (99:1) contacts on diamond with different B concentrations have been investigated. The change of the current-voltage characteristic from rectifying to ohmic on lightly doped samples, and the drop of the contact resistivity by orders of magnitude for more heavily B-doped samples after annealing at 450 °C in N 2, are attributed to the formation of SiC at the metal-diamond interface. The existence of the SiC interface has been verified by X-ray-induced photoelectron spectroscopy. In addition, the contact resistivity is a very sensitive function of doping at high doping concentrations. Contact resistivities as low as about 10 −7 θ cm 2 have been achieved.
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