Abstract
We propose the bipolar-mode operation of resistive random access memory devices in a purely oxygen-vacancy (V0)-controlled regime, which is achieved by very low compliance capping for forming/set transitions. This regime enables us to achieve a very low reset current of 10-100 nA, in which the governing mechanism for switching only involves the reversible drift of oxygen ions to and from oxygen soluble gate electrodes. The physical analysis of a gate stack in this V0 regime confirms the absence of metallic nanofilaments. These findings pave the way for the realization of ultralow switching power RRAM devices.
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