Abstract
This work studies low recombination phosphorus emitters on c-Si. The emitters are fabricated by diffusion from solid sources and then passivated by thermal oxide yielding sheet resistances between 15 and 280 Ω/sq. Emitter saturation current densities lie in the 2.5–110 fA cm−2 range, leading to implicit open-circuit voltages between 674 and 725 mV. Bulk lifetime is limited by intrinsic recombination mechanisms. Surface recombination velocities between 80 and 300 cm s−1 have been obtained, appearing among the lowest reported in this range of emitter sheet resistances.
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