Very low defects and high performance Ge-on-insulator p-MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics

C.H Huang,B.J Cho,Albert Chin Albert Chin,M.Y Yang,C.X Zhu,W.J Chen,D.L Kwong,M.-F Li

doi:10.1109/vlsit.2003.1221114

Very low defects and high performance Ge-on-insulator p-MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics

C.H Huang, B.J Cho + Show 6 more

https://doi.org/10.1109/vlsit.2003.1221114

Copy DOI

Publication Date: Jun 10, 2003

Citations: 28

Affiliation: National University of Singapore, National Yang Ming Chiao Tung University, National Yunlin University of Science and Technology

#Ge-on-insulator #Increase In Hole Mobility + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

We demonstrate for the first time high quality and dislocation free Ge-on-insulator (GOI) p-MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics [EOT=1.7 nm]. Compared to control Al/sub 2/O/sub 3//Si p-MOSFETs, the Al/sub 2/O/sub 3//GOI devices show similar leakage current for the same EOT, 2X increase in drive current, and 2.5X increase in hole mobility. In addition, the Al/sub 2/O/sub 3//GOI devices exhibit 1.3X enhanced hole mobility over the SiO/sub 2//Si universal hole mobility at E/sub eff/ of 1 MV/cm.

Full Text

Paper version not known

Open DOI Link

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Similar Papers

Paper Title

Journal

Date

Author

View more papers

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.