Very low defects and high performance Ge-on-insulator p-MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics

C.H Huang,W.J Chen,D.L Kwong,M.-F Li,B.J Cho,C.X Zhu,Albert Chin Albert Chin,M.Y Yang

doi:10.1109/vlsit.2003.1221114

Very low defects and high performance Ge-on-insulator p-MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics

C.H Huang, W.J Chen + Show 6 more

https://doi.org/10.1109/vlsit.2003.1221114

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Publication Date: Jun 10, 2003

Citations: 28

Affiliation: National Yunlin University of Science and Technology, National University of Singapore, National Yang Ming Chiao Tung University

#Ge-on-insulator #Increase In Hole Mobility + Show 8 more

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Abstract

We demonstrate for the first time high quality and dislocation free Ge-on-insulator (GOI) p-MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics [EOT=1.7 nm]. Compared to control Al/sub 2/O/sub 3//Si p-MOSFETs, the Al/sub 2/O/sub 3//GOI devices show similar leakage current for the same EOT, 2X increase in drive current, and 2.5X increase in hole mobility. In addition, the Al/sub 2/O/sub 3//GOI devices exhibit 1.3X enhanced hole mobility over the SiO/sub 2//Si universal hole mobility at E/sub eff/ of 1 MV/cm.

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