Abstract

We have demonstrated the first very long wavelength (16 μm) infrared hot electron transistor (IHET). This device utilizes a bound to continuum GaAs/Al x Ga 1-x As (x=0.11) quantum well infrared photodetector (QWIP) as a photosensitive emitter, a wide quantum well as a base, and a thick Al x Ga 1-x As (x=0.11) barrier between the base and the collector as an energy discriminating filter. This energy filter blocks the lower energy tunneled electrons, which drain through the base while higher energy photo electrons pass to the collector. Therefore, the detectivity of the device at the collector is much higher than the detectivity'at the emitter

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