Abstract
We have demonstrated a bound-to-continuum state GaAs/AlxGa1−xAs infrared hot electron transistor which has a peak response at λp=16.3 μm. This device utilizes a bound-to-continuum quantum well infrared photodetector as a photosensitive emitter and a wide AlxGa1−xAs barrier between the base and the collector as an energy discriminating filter. An excellent photocurrent transfer ratio of αp=0.12 and very low dark current transfer ratio of αd=7.2×10−5 is achieved at a temperature of T=60 K.
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