Abstract
The effect of the spot diameter in nanosecond excimer laser percussion drilling of through via in silicon wafer is presented. Experimental results show a ten fold increase of the ablation efficiency when decreasing the spot diameter from 220 μm to 9 μm at constant fluence in the range 7.5 J/cm(2) to 13.2 J/cm(2). Such effect is absent when using 60 ps deep-UV laser pulses. A model is developed that explain the findings in terms of plume shielding effect on the laser pulse. The model is successfully applied also on previously published data on deep-UV laser drilling of Polyamide and Alumina.
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