Very high two-dimensional electron gas concentrations with enhanced mobilities in selectively double-δ-doped GaAs/InGaAs pseudomorphic single quantum well heterostructures

Abstract

In this letter a new type of GaAs/In0.25Ga0.75As/GaAs pseudomorphic single quantum well heterostructure by selectively double-δ-doping GaAs layers on both sides of the InGaAs channel grown by low-pressure metalorganic chemical vapor deposition is demonstrated. An extremely high two-dimensional electron gas concentration more than 1×1013 cm−2 with enhanced mobility of 2900 cm2/V s is achieved. This type of structure can easily break through the doping limitation in conventional heterostructures while keeping a high mobility.