Abstract

The technology and system applications of high speed OEIC transmitters are discussed in this paper. With only two MOCVD growths and conventional processing techniques, OEIC transmitters made of sophisticated DFB laser diodes and InGaAs/InAlAs MODFETs can be fabricated. A speed of 10 Gbit/s has been demonstrated. Using the same technology, OEIC transmitters for high bit rate time division multiplexed (TDM) and dense wavelength division multiplexed (WDM) systems are designed and fabricated. There is evidence showing that the OEIC transmitter integrated with multiplexers and other critical circuits can offer significant cost reduction and performance improvement compared to hybrid approach. Using a four-channel OEIC WDM transmitter, we demonstrate its capability of precise wavelength control by setting the channel spacing as close as 0.3 nm. Finally, the crosstalk of OEIC is analyzed. Bonding wires are confirmed as the dominant factor for RF crosstalk. To keep the thermal crosstalk within an acceptable level, a proper device spacing to substrate thickness ratio has to be chosen.

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