Abstract
We investigated the effects of adding and nitric oxide gases on the chemical dry etching of silicon (Si) in remote plasmas. Additive gas in the remote plasmas enhanced the Si etch rate, while the direct injection of gas into the chamber even more markedly increased the Si etch rates. Surface chemical and emission gas analyses indicated that the adsorbed molecules on the Si surface enhanced the surface chemical reaction between fluorine and Si atoms, thereby forming main etch products and enhancing the etch rate. The -induced breaking of the bonds was considered to facilitate the formation.
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