Abstract
Using the adduct compound trimethylindium-trimethylphosphine (TMIn-TMP) very high purity InP layers have been grown by atmospheric pressure MOVPE (AP-MOVPE). Residual electron concentrations of less than 4 × 10 14 cm -3 and mobilities of up to 149,000 cm 2/V·s at 77 K have been obtained.
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