Abstract
In this study, we focus on the good surface flattening characteristics of Si(551) surface using the repeated radical oxidation technology. We demonstrate that the electrical characteristics of the MOSFETs on Si(551) have been obviously improved by introducing the Accumulation-mode device structure. Finally, a very high performance CMOS has been successfully realized on Si(551) surface by combining the radical oxidation silicon flattening technology and Accumulation-mode device structure.
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