Abstract
A very high current ECR ion source is developed for a 50–100 mA oxygen ion implanter used for making SIMOX (separation by implanted oxygen) substrates with high production throughput. This newly developed ECR ion source achieves a 160 mA ion current with 20 mm beam diameter, that is, a very high-density ion current of 120 mA/cm 2. It also has a high desired O + to total ion ratio as well as having stability with reactive gas due to its no filament structure. To obtain high ion current density and maintain reliable operation, this source has a double layer microwave introduction window, an optimized axial magnetic field intensity and a short axis plasma chamber.
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