Very high aspect ratio through-silicon vias (TSVs) fabricated using automated magnetic assembly of nickel wires

Abstract

Through-silicon via (TSV) technology enables 3D-integrated devices with higher performance and lower cost as compared to 2D-integrated systems. This is mainly due to smaller dimensions of the package and shorter internal signal lengths with lower capacitive, resistive and inductive parasitics. This paper presents a novel low-cost fabrication technique for metal-filled TSVs with very high aspect ratios (>20). Nickel wires are placed in via holes of a silicon wafer by an automated magnetic assembly process and are used as a conductive path of the TSV. This metal filling technique enables the reliable fabrication of through-wafer vias with very high aspect ratios and potentially eliminates characteristic cost drivers in the TSV production such as advanced metallization processes, wafer thinning and general issues associated with thin-wafer handling.