Abstract
The photovoltaic effect in oxide layers on so-called valve metalls (Al, Ta, Zr, etc.) can be used on principle also for the direct conversion of energy from radioactive particles (α and β) into electrical energy. It can be expected that the resistivity of these oxide layers against radiation damages because of their usually amorphous structure is higher compared with p- n junctions in monocrystalline semiconductors. Since the photovoltaic effect in these oxide layers is not connected with a metallic (or electrolytic) sandwich contacting it is proposed to use an ionized gas as counter electrode, this gas being possibly ionized by radiactive radiation itself. This method was qualitatively investigated by β-irradiation (Tritium) of Ta 2O 5-layers produced by anodizing.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
