Abstract
AbstractWe propose a double heterojunction organic light‐emitting diode (OLED) using a zinc oxide (ZnO) film, which works as a transparent and electron injection layer. The crystal structure of the ZnO films as a function of Ar/O2 flow ratio and the basic characteristics of the OLED depending on the ZnO sputtering conditions are investigated. Excellent characteristics of the novel OLED were obtained, as high as 470 cd/m2 at 22 V and 7.6 mA/cm2. The results obtained here demonstrate that the vertical organic light‐emitting transistor (OLET) using a ZnO layer as an electron injection layer is promising as a key element for flexible sheet displays. © 2006 Wiley Periodicals, Inc. Electr Eng Jpn, 158(2): 49–55, 2007; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/eej.20151
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