Abstract
ABSTRACTVertical-type a-Si:H Field Effect Transistors with 1 μm channel length have been investigated. A simple analysis of the FET characteristics indicates that the reduction of the channel length is an effective method to improve the FET characteristics at least up to the channel length of 1 μm. Experimental results showed that the on-resistance is approximately propotional to the channel length and that on off current ratio of the vertical-type FET with 1 μm channel length was more than 104.
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