Abstract
In this paper, a novel vertical-structured electron-hole bilayer tunnel field-effect transistor (V-EHBTFET), which features dual gates located at each side of Si fin, is proposed and its electrical characteristics are examined by a technology computer-aided design simulation depending on device parameters. Comparing with the conventional EHBTFET, V-EHBTFET shows a comparable performance in terms of subthreshold swing, OFF- and ON-state currents, and turn-ON voltage with much higher scalability with the help of a novel device architecture. An exemplary self-aligned process flow is also proposed.
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