Abstract
Summary form only given. Additional confinement in semiconductor quantum wires is expected to significantly improve the performances of semiconductor devices due to the increased density of states at the band edge. We report our result on the fabrication of self-assembled InAs/InP quantum wires (QWRs) with single and 10 vertical-periods. Our InAs QWRs were grown on InP [001] substrates in a Riber 32 MBE system at the temperature of 430/spl deg/C and a growth rate of 0.3 ML/s. The photoluminescence (PL) spectra and PL polarizations of the two samples were investigated at different pump wavelengths, different pump intensities and sample temperatures. Our results exhibited unique behaviors, especially on the stacked quantum wires. Following our detailed analyses, we determined the structure of the stacked quantum wires from the bottom to the top, which is different from the designed one. Furthermore, we have provided a new design that will result in the narrowing of the PL linewidth for the stacked self-assembled quantum wires.
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