Abstract
By integrating a p-i-n photodiode photodetector directly into a ballistic electron emission luminescence (BEEL) heterostructure with GaAs quantum-well active region, we have obtained a photon detection efficiency of more than 10%. This is many orders of magnitude higher than conventional far-field detection scheme with the most sensitive single-photon counters, enabling BEEL microscopy in systems with no optical components. Detailed analysis shows found a parasitic bipolar injection in parallel with the desired optical coupling between the BEEL heterostructure and the integrated photodiode beyond a characteristic collector bias, which may be solved by improved device design or limiting the operating window of the collector bias. Preliminary BEEL microscopy images of a homogeneous GaAs quantum-well luminescent layer show lateral variations of photon emission correlated with the collector current injection level modulated by surface features or interface defects.
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