Abstract
Vertically aligned ZnO nanowires have been synthesized on Si substrate by catalyst-free thermal evaporating metallic zinc powder at a low temperature of 600 °C. Studies found that the ZnO nanowires are single-crystalline wurtzite structures with 70 nm in diameter and 10 μm in length. The turn on field of the ZnO nanowires was about 6.2 V/μm at a current density of 0.1 μA/cm 2, and the emission current density reached 1 mA/cm 2 at an applied field of about 15.0 V/μm. Field emission property from the ZnO nanowires was enough high level to be applicable to field emission displays and vacuum microelectronic devices.
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