Vertically Aligned Al-Doped ZnO Nanowire Arrays as Efficient Photoanode for Dye-Sensitized Solar Cells

Abstract

In this communication, we report on the synthesis of vertically aligned aluminium (Al)-doped ZnO (ZnO:Al) nanowire (NW) thin films on FTO-coated glass substrates and their use as photoanode in dye-sensitized solar cells (DSSC). Very thin Al layers (∼3 nm, ∼6 nm and ∼10 nm) were deposited onto chemically synthesized ZnO nanowire film by electron-beam evaporation. The films were then subjected to rapid thermal annealing to incorporate different amounts of Al (∼0.98 at.%, 1.94 at.% and ∼2.89 at.%) into the ZnO nanowires. Optical, microstructural and compositional study of the films confirmed the growth of highly transparent and well-aligned ZnO:Al nanowires with a hexagonal crystal structure. The basic DSSC structure was fabricated using both undoped ZnO nanowire and ZnO:Al nanowire thin films as photoanode. In both cases, commercially available N3 dye was used as a photosensitizer, iodide/tri-iodide solution as electrolyte and FTO-coated glass as counter electrode. A significant increase in short-circuit current was observed, from 1.3 mA cm−2 for the pristine ZnO nanowire film-based DSSC to 4.4 mA cm−2 for the ZnO:Al (2.89 at.%) nanowire film-based DSSC. The overall power conversion efficiency (PCE) was also found to increase from 0.13% (for pristine ZnO nanowire thin film) to 0.49% for the ZnO:Al thin film-based DSSC.