Abstract
The light output power of AlGaInP-based vertical-injection light-emitting diodes (VI-LEDs) can be enhanced significantly using n-AlGaInP nanopillars. n-AlGaInP nanopillars, ~200 nm in diameter, were produced using SiO2 nanopillars as an etching mask, which were fabricated from self-assembled tin-doped indium oxide (ITO)-based nanodots formed by the wet etching of as-deposited ITO films. The AlGaInP-based VI-LEDs with the n-AlGaInP nanopillars provided 25 % light output power enhancement compared to VI-LEDs with a surface-roughened n-AlGaInP because of the reduced total internal reflection by the nanopillars at the n-AlGaInP/air interface with a large refractive index difference of 1.9.
Highlights
Given the recent strong interest in the epitaxial quality of AlGaInP-based materials, the application of AlGaInPbased light-emitting diodes (LEDs) has been extended to automotive lighting, full-color displays, and visible light communications, which require high-brightness and high-power operation [1,2,3,4]
The results show that the light output power of AlGaInP-based vertical-injection LEDs (VI-LEDs) with n-AlGaInP nanopillars can be improved considerably compared to that of the VILEDs with surface-roughened n-AlGaInP, which is a widely implemented method for increasing the light extraction efficiency (LEE) of AlGaInP-based VI-LEDs
This paper reports an improvement of the LEE of the AlGaInP-based VI-LEDs with wafer-bonded Si conductive substrates using the n-AlGaInP nanopillars
Summary
Given the recent strong interest in the epitaxial quality of AlGaInP-based materials, the application of AlGaInPbased light-emitting diodes (LEDs) has been extended to automotive lighting, full-color displays, and visible light communications, which require high-brightness and high-power operation [1,2,3,4]. AlGaInP LEDs with a roughened surface, textured surface, and truncated pyramid geometry were reported to enhance the LEE by increasing the critical angle and the probability of escape of emitted light from an air/semiconductor interface [8,9,10]. Omni-directional reflectors as a p-type electrode and an air-hybrid distributed Bragg reflector structure were reported to improve the LEE of AlGaInP LEDs significantly [11, 12]. The nanorods fabricated using Au metal clusters as nanomasks improved the LEE of AlInGaP LEDs greatly by enhancing the probability of escape of emitted light, this approach cannot be implemented in high-power AlGaInP-based VI-LEDs with wafer-bonded Si conductive substrates, because the formation of Au metal clusters requires high temperature annealing (>400 °C), which is significantly higher than that of wafer bonding between the Si conductive wafer and AlGaInP LED wafer
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