Abstract
Lateral and vertical electron transport parameters were investigated in lightly doped n-GaN films, grown by MBE. Diodes were fabricated by forming Schottky barriers on n−-GaN films using a mesa-etched vertical geometry. Doping concentrations and barrier heights were determined, from C-V measurements, to be 8-9×1016 cm−3 and 0.95-1.0 eV respectively. Reverse saturation current densities were measured to be in the 1-10×10−9 A/cm2 range. Using the diffusion theory of Schottky barriers, vertical mobility values were determined to be 950 cm2/V-s. Lateral mobility in films grown under similar conditions was determined by Hall effect measurements to be 150-200 cm2/V-s. The significant increase in mobility for vertical transport is attributed to reduction in electron scattering by charged dislocations.
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