Vertical transport in a GaAs/(Ga,Al)As superlattice containing an enlarged quantum well studied by photoluminescence in high in-plane magnetic fields

Abstract

Vertical transport in a GaAs/(Ga,Al)As superlattice has been studied using photoluminescence and magnetophotoluminescence measurements with in-plane fields of up to 25 T at temperatures in the range 4-80 K. Vertical transport at 4 K (which is determined by exciton transport) has been found to be less efficient than free-carrier-like transport at high temperatures (47 and 80 K). Application of a high, in-plane magnetic field tends to reduce the hole transport considerably. In addition, a drastic enhancement of the total photoluminescence yield with in-plane field has been observed.