Vertical stacks of pulsed (100 ns) mesa-stripe semiconductor lasers with an ultra-wide (800 μm) aperture emitting kilowatt-level peak power at a wavelength of 1060 nm

Abstract

A pulsed source of radiation in the spectral region of 1060 nm with a kilowatt level peak output power is developed based on a vertical stack of microbars of stripe semiconductor lasers with an ultra-wide (800 μm) aperture. The laser stack contains three microbars with three emitters each, which ensures an emitting area of 2.6 × 0.4 mm. The highest radiative efficiency of the stack is 2.48 W A−1. The maximum achieved peak power reached 1400 W under pumping by current pulses with an amplitude of 650 A and a duration of 100 ns and is limited by the current source capacity.