Abstract
In this work, we fabricate Pt, Ni and Pd vertical Schottky barrier diodes (SBDs) on bulk (−201) α-Ga 2 O 3 substrates. We fabricate the diodes on two types of Ga 2 O 3 substrates, un-intentionally doped (UID) with 1017 cm−3 electron concentration and Sn-doped with 5×1018 cm−3 electron concentration. We characterize the diodes with current-voltage (I–V), capacitance-voltage (C-V) and reverse breakdown measurements. We observe a Schottky barrier height lowering (as extracted from forward I–V characteristics) in SBDs fabricated on Sn-doped Ga 2 O 3 substrates along with an increase in ideality factor. In Pt SBDs fabricated on UID Ga 2 O 3 substrate, we obtain a reverse breakdown voltage more than 170V. This breakdown voltage corresponds to a Pt/Ga 2 O 3 interface electric field of more than 2.6 MV/cm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
