Abstract
A new technique to manufacture vertical reduced surface field (RESURF)/superjunction devices is presented, in which the alternating p-n-junctions in the drift region are formed by a combination of a trench etch and vapor-phase doping process. Electrical measurements on Schottky RESURF diodes exhibit breakdown voltages up to 160 V with an on-resistance of 182 m/spl Omega/.mm/sup 2/ using a 10 /spl mu/m n-type drift region doped at 7.5/spl middot/10/sup 15/ cm/sup -3/. We show experimentally that such a device concept is able to display specific on-resistance well below the one-dimensional silicon limit and is a good candidate to manufacture vertical power RESURF MOSFETs.
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