Abstract
A vertical MOSFET with a channel length of 85 nm has been fabricated by molecular beam epitaxy. Compared to previous work, the electrical behaviour has been greatly improved, allowing the use of standard simulation tools for analysing the I-V characteristics. From experimental and theoretical results, we conclude that for vertical MOSFETs, the useful minimum channel length is not limited by the technological constraints but by the physical limits of the electrical performance. The useful minimum channel length is estimated to be 80 nm.
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